The new topic included in the syllabus is the transistor and bistable circuits..can someone provide me its notes pls
The syllabus states:
25. Electronic Systems
Note: There is no compulsory question set on Section 25 of the syllabus. Questions set on topics within
Section 25 are always set as an alternative within a question.
Content
25.1 Switching and logic circuits
25.2 Bistable and astable circuits
Learning Outcomes
Candidates should be able to:
(a) describe the action of a bipolar npn transistor as an electrically operated switch and explain its use in
switching circuits.
(b) state in words and in truth table form, the action of the following logic gates, AND, OR, NAND, NOR and
NOT (inverter).
(c) state the symbols for the logic gates listed above (American ANSI Y 32.14 symbols will be used).
(d) describe the use of a bistable circuit.
(e) discuss the fact that bistable circuits exhibit the property of memory.
(f) describe the use of an astable circuit (pulse generator).
(g) describe how the frequency of an astable circuit is related to the values of the resistive and capacitative
components.
The syllabus states:
25. Electronic Systems
Note: There is no compulsory question set on Section 25 of the syllabus. Questions set on topics within
Section 25 are always set as an alternative within a question.
Content
25.1 Switching and logic circuits
25.2 Bistable and astable circuits
Learning Outcomes
Candidates should be able to:
(a) describe the action of a bipolar npn transistor as an electrically operated switch and explain its use in
switching circuits.
(b) state in words and in truth table form, the action of the following logic gates, AND, OR, NAND, NOR and
NOT (inverter).
(c) state the symbols for the logic gates listed above (American ANSI Y 32.14 symbols will be used).
(d) describe the use of a bistable circuit.
(e) discuss the fact that bistable circuits exhibit the property of memory.
(f) describe the use of an astable circuit (pulse generator).
(g) describe how the frequency of an astable circuit is related to the values of the resistive and capacitative
components.